Advances in bioelectronics: Materials, devices, and translational applications
نویسندگان
چکیده
First Page
منابع مشابه
Advances in nanowire bioelectronics.
Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energ...
متن کاملPhotonic Materials and Devices
Our recent advances in solid-state optoelectronic materials and devices will be reviewed. In the area of glass optics, fabrication of novel microstructured and multi-core fibers and their use in realizing single mode lasers will be summarized. In organic and plastic optics, photorefractive polymers for 3D display applications and nonlinear optical polymers for high speed modulators in RF photon...
متن کاملConducting Polymer Devices for Bioelectronics
The emergence of organic electronics – a technology that relies on carbon-based semiconductors to deliver devices with unique properties – represents one of the most dramatic developments of the past two decades. A rapidly emerging new direction in the field involves the interface with biology. The " soft " nature of organics offers better mechanical compatibility with tissue than traditional e...
متن کاملStretchable bioelectronics for medical devices and systems
Advances in the microelectronics and telecommunications industries have driven important breakthroughs in medical technologies and health diagnostics over the past decade. However, there are fundamental gaps in size, sensing modalities and mechanical properties between the standard rigid electronics, employed in medical devices today, and the signals emitted by soft biological structures. Here,...
متن کاملRecent Advances in III-Nitride Ultraviolet Photonic Materials and Devices
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics materials and devices. In particular, the growth and characterization of AlGaN alloys are discussed in detail. It was shown that AlGaN could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have shown that Si-doping reduces the effect of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: APL Materials
سال: 2021
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0060323